R&D Internship in SiC Power Devices 80 - 100% (f/m/d)

The opportunity

Join our SiC power-device R&D team to transform years of verification and characterization results into actionable insights. You'll mine and structure large, heterogeneous datasets from SiC MOSFETs (across voltage classes, modules, parasitics, and chip-per-substrate variants) and from legacy Si IGBTs/diodes. Your work will uncover trends, issues, and opportunities, inform our ongoing verification and qualification campaigns, and help connect module/substrate behavior back to chip design choices. You'll collaborate with device, module, test, and reliability experts and help steer new experiments that deepen our understanding of product behavior.

How you'll make an impact

• Structure and standardize historical and new verification data across SiC (and relevant Si) platforms
• Build simple, reusable analysis workflows to compare conditions and surface trends
• Translate insights into clear implications for chip design, modules/substrates, and test setups
• Propose and support targeted follow-up tests to validate hypotheses and close gaps
• Communicate results through concise reports and visuals to guide verification and qualification decisions

• Master's student in Electrical Engineering, Physics, Materials Science, or related field
• Proficient in data analysis and scripting (Python and/or MATLAB); comfortable building clean, reusable notebooks/scripts and using version control (Git)
• Hands-on with laboratory measurements: experience operating and troubleshooting test setups; basic lab automation and instrument control are a plus
• Solid grasp of power-device fundamentals: SiC MOSFETs, Si IGBTs/diodes, switching behavior, parasitics, and SOA concepts
• Clear communicator in English (written & verbal); German/Swiss German is an advantage
• Curious, structured, and proactive: able to bring order to heterogeneous datasets, question assumptions, and turn analysis into clear recommendations