R&D Internship in BiMOS Semiconductor Chips 80 - 100% (f/m/d)

The opportunity

Join a collaborative R&D team that develops next-generation semiconductor technologies shaping a sustainable energy future. You will work in a supportive environment that values curiosity, precision, and continuous learning. In this internship, you will deepen your technical expertise while contributing to meaningful innovation with real impact. You will collaborate closely with specialists who will guide you, encourage your growth, and help you expand your capabilities. This opportunity offers hands-on experience, exposure to advanced technologies, and space to thrive in an inclusive and forward-thinking workplace. The internship duration is 6 - 12 months.

How you'll make an impact

• Investigate next-generation Si power semiconductor device concepts
• Analyse experimental data to improve electrical performance
• Study safe-operating-area behaviour and device failure modes
• Perform device design work and run relevant simulations
• Benchmark design outcomes through detailed electrical characterisation
• Present insights and results to multidisciplinary team members
• Support root-cause analyses for device behaviour during SOA conditions
• Collaborate with fabrication and testing teams on experiment execution

• Master's student or recent bachelor's graduate in electrical engineering, physics, materials science, or similar field
• Know-how in data analysis and statistics, with a well-versed knowledge of programming/scripting languages, such as Python
• Solid understanding of semiconductor device physics, materials (Si, SiC, GaN, etc), fabrication basics, and the operation of devices such as diodes, MOSFETs, and BJTs
• Excellent communication skills, both written and verbal, to effectively document the design and present results to the team
• Fluent in Englisch