MMIC/RFIC Engineer Circuit Designer 4

Did you know that Northrop Grumman's Advanced Technology Lab (ATL) is developing discriminating semiconductor technologies at our foundry in Baltimore, Maryland?

Northrop Grumman's Mission Systems is searching for senior technical candidates experienced in MMIC and RFIC design and semiconductor device modeling. The candidate will be responsible for all aspects of RF/microwave/millimeter-wave integrated circuit design, including device characterization and model creation, schematic capture, schematic simulation, circuit layout, electro-magnetic simulation and physical verification (DRC and LVS). Typical designs will include power amplifiers (PA), mixers, switches, phase shifters, attenuators, and low noise amplifiers spanning DC-110GHz. The successful candidate shall have prior experience with any of the following:

  • GaAs, GaN, SiGe BiCMOS and/or RF-CMOS devices and circuit designs
  • device characterization, parameter extraction and model creation
  • industry-standard tools such as MATLAB, Keysight ADS, Ansys HFSS and Cadence Virtuoso
  • performing S-parameter, load pull, TOI, P1dB/Psat and noise figure measurements
  • troubleshooting of complex RF/microwave/millimeter-wave circuits
  • parsing and analyzing large datasets using Access to guide semiconductor process development
  • mixed node/technology co-design for 2.5/3D highly integrated heterogeneous circuits
  • modeling and design of silicon-based interposers with thru-silicon-vias

The candidate will work collaboratively in a multi-disciplinary team, including Process Integration, Fabrication, Test, and PDK within Northrop Grumman's semiconductor foundry as well as external foundry partners to develop and enable discriminating products for radar, communication and EW system applications.

Basic Qualifications

Must have a Bachelor's of Science in Electrical Engineering, Physics or closely related STEM degree with 9 years of experience in the Integrated Circuit field including RF/Microwave, MMIC or RFIC design; OR a Master's Degree in Electrical Engineering, Physics or closely related STEM degree with 7 years of experience in the Integrated Circuit field including RF/Microwave, MMIC or RFIC design; OR a Ph.D. in Electrical Engineering, Physics or closely related STEM degree with 4 years of experience in the Integrated Circuit field including RF/Microwave, MMIC, or RFIC design.

  • Previous experience with RF/microwave circuit design and proficiency with ADS suite of tools including Momentum, HFSS, Cadence Spectre and Virtuoso, and either Cadence DIVA/Assura or Mentor Calibre physical verification tools.
  • Experience working with GaAs and/or GaN
  • Ability to obtain and maintain a Secret clearance

Preferred Qualifications (Basic Qualifications plus the following)

  • Previous experience with RF measurement equipment and techniques for device characterization and modeling.
  • Experience in SiGe and RFCMOS
  • Current Secret clearance

Northrop Grumman is committed to hiring and retaining a diverse workforce. We are proud to be an Equal Opportunity/Affirmative Action Employer, making decisions without regard to race, color, religion, creed, sex, sexual orientation, gender identity, marital status, national origin, age, veteran status, disability, or any other protected class. For our complete EEO/AA and Pay Transparency statement, please visit www.northropgrumman.com/EEO. U.S. Citizenship is required for most positions.


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