CMOS Reliability Engineer

    • Albuquerque, NM

Job Description
In this position, you will be working as a member of the Non-Volatile Memory (NVM) Solutions Group's (NSG's) Technology Development Quality and Reliability team, helping to develop Intel's new emerging NVM technologies (such as 3D-NAND and 3D-XPointTM) and SSD products, focusing on CMOS transistor reliability. Your responsibilities will include but not limited to:
• Characterizing CMOS device and interconnect FEOL and BEOL reliability
• Working in conjunction with process integration and device engineers to provide reliability feedback during technology development, along with developing and setting up fast reliability monitors
• Developing empirical and physics-based predictive reliability modeling methods and tools for reliability risk assessments
• Developing new acceleration techniques, test methods and analytical tools to provide fast and effective feedback for process, product and test optimization on reliability issues
• Developing transistor aging models aiming to ensure proactive product design for high reliability
• Determining reliability requirements and technology targets of components to achieve company, customer and other reliability objectives
• Influencing design, process, product, test and/or system solutions in order to enable aggressive scaling of Intel's NVM technologies
• Develop CMOS reliability monitoring procedures to use in production

You may be expected to work in cross-functional and cross-company groups of engineers on multi-disciplinary technical projects to solve complex reliability issues- such as, during technology development and ramp to high-volume manufacturing. You may also be expected to work with reliability lab technicians for data collection and analysis.


You must possess the minimum qualifications below to be initially considered for this position. Preferred qualifications are in addition to the minimum requirements and are considered a plus factor in identifying top candidates.

Minimum Qualifications:

A BS in Electrical Engineering, Physics, Materials Science, or Computer Engineering and 5+ years of experience, or an advanced degree (MS or PhD) and 3+ years of experience in the following areas:

- CMOS device and interconnect FEOL and BEOL reliability
-Semiconductor device physics, materials science, probability and statistics, circuit design, semiconductor processing, or quantum physics
- Test equipment such as semiconductor parametric analyzer CV-IV, probe stations, pulse generators, oscilloscopes, etc. for electrical characterization of electronic materials and devices

Preferred qualifications:

Technical skills:

• 5+ years of experience in CMOS transistor reliability physics (TDDB, HCI, NBTI, PBTI), inter-metal dielectric reliability and EM
• Skill and experience in transistor device modeling, characterization, reliability aging models and simulation for circuit reliability assessments
• Proficient in reliability failure statistics, physics, or reliability failure mechanisms
• 5+ years of experience with test equipment such as semiconductor parametric analyzer CV-IV, pulse generators, oscilloscopes, etc. for electrical characterization of electronic materials and devices
• 3+ years of experience of computer programming for testing, and data acquisition, reduction and analysis (C or C++, Perl, Python, LabVIEW)
• Skill with statistical analysis packages (e.g. R, JMP or Minitab)
• Knowledge of semiconductor fabrication process, CMOS transistor level circuit design, packaging assembly, test and/or board/system level technology operation

Performance skills:
• Demonstrated ability to solve technical problems and provide workable solutions
• Ability to work well in a team setting with people from a wide range of backgrounds
• Demonstrated ability to work in a fast-paced dynamic environment
• Demonstrated persistence and commitment to achieving results
• Ability to clearly communicate achieved results and to influence wide range of audiences

Inside this Business Group
Non-Volatile Solutions Memory Group:  The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices.  The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.

Other Locations

US, California, Folsom

Posting Statement

All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance....
US Experienced Hire JR0129517 Albuquerque

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