3D XPoint Advanced Memory Technology Development Engineer
This is an exciting opportunity to work on the latest breakthrough in Non-Volatile Memory Technology: Intel 3D XPoint memory and Intel Optane Technology.
This role's primary responsibilities include electrical characterization of 3D XPoint memory arrays, developing memory operation and testing algorithms, collaborating with design engineering, test engineering, product engineering, and process engineering in the development of Intel 3D XPoint memory technology and delivery of the technology to high-volume manufacturing, as well as collaborating with reliability engineering and systems engineering for the qualification of Intel Optane Technology products.
The right candidate will be highly confident in their expert knowledge of fundamental device physics, electrical circuits, mathematics and statistics, and will be familiar with memory architectures. The right candidate must also be passionate to be involved in the development of cutting-edge memory technology, and be excited to be engaged in a fast-paced working environment.
Behavioral Requirements: Ability to work independently and efficiently to address complex technical challenges, Excellent communication and presentation skills, and have a demonstrated track-record of working effectively in a cross-functional team setting.
Non-Volatile Memory Device and Integration engineers are responsible for leading research and development in order to architect, develop and deliver leading edge nonvolatile memory technologies to high volume manufacturing. They contribute to defining process and device architectures, technology collaterals as well as develop scaling paths for leading edge memory technologies. The scope includes development of new types of process and device architectures involving novel materials, structures and integration schemes to deliver industry leadership in density, performance, reliability and cost. They collaborate with technology development partners in defining goals, developing the vision, aligning strategy and driving fast paced silicon development to meet aggressive technology node cadences. In addition they work closely with the product and system teams to ensure seamless integration of the memory components into Intel's system products as well as with the manufacturing Fabs to ensure a seamless technology transfer and ramp to support the full envelope of component and system products.
Candidate should possess a Doctor of Philosophy (PhD) degree in Physics, Electrical Engineering, or a related field.
• Minimum 1 years of experience in Semiconductor device physics.
• Minimum 1 years of experience in Characterization or Modeling of advanced semiconductor devices
• Minimum 1 years of experience in programming and scripting languages, such as C , Python, Matlab
• Minimum 1 years of experience in statistical analysis methods and analysis software, such as Excel and JMP
• Experience with electrical test equipment such as oscilloscope, pulse generator, parameter analyzer
• Experience working on a memory technology
Inside this Business Group
Non-Volatile Solutions Memory Group: The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices. The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.
All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance....
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